0 Members and 1 Guest are viewing this topic.
I hear that we made the leap from 1GB devices to economical 4GB ones simply by storing more than 1 bit per memory cell. A few years ago, a single transistor storage element was either "on" or "off" and so represented just one binary bit of information. Now, with better manufacturing processes and readout circuitry, we can store several voltage levels on one transistor. 4 levels = 2 bits, 8 levels = 3 bits. So with barely any more complexity (read number of transistors, or area of silicon), capacities have been doubled/ quadrupled "overnight".
But would this not make them substantially more susceptible to noise and ageing?
QuoteBut would this not make them substantially more susceptible to noise and ageing?You would think so. The fact that products exist would seem to imply the problem is not too bad, or can be worked around.