1
Technology / What can I learn from electro-optical characterisation testing of Si detectors?
« on: 31/07/2022 15:20:09 »
I am conducting a project where I am running a set of characterization tests on a group of 10 different silicon photodiode detector models.
The 10 detector models to be tested vary in many ways including: which wavelength they are optimally sensitive to; what the maximum voltage applied to each should be; the current level which flows in the device absent of light (dark current); C-V and I-V relationships.
The characterization tests are: Capacitance-Voltage testing; Current-Voltage testing; Dark Current stability testing; Spectral Responsivity testing & UV stability testing.
I understand the basics of how silicon photodiodes operate - the P-N junction, and reverse/zero bias mode, how capacitance and dark current relate to bias setup etc - and I understand each of the terms/qualities which are being tested. I also know how to conduct each test and how to plot the results and compare them.
What I need is someone to please explain to me is WHAT CAN BE LEARNED from these characterisation tests? I have been learning about these devices and their operation, and what is being measured by each test. I am familiar with each of them but I just need someone to PLEASE spell out what information can be learned from performing these tests.
Is it simply that I will learn which application each device is best suited to? Is it how future devices could be designed?
Thanks in advance.
The 10 detector models to be tested vary in many ways including: which wavelength they are optimally sensitive to; what the maximum voltage applied to each should be; the current level which flows in the device absent of light (dark current); C-V and I-V relationships.
The characterization tests are: Capacitance-Voltage testing; Current-Voltage testing; Dark Current stability testing; Spectral Responsivity testing & UV stability testing.
I understand the basics of how silicon photodiodes operate - the P-N junction, and reverse/zero bias mode, how capacitance and dark current relate to bias setup etc - and I understand each of the terms/qualities which are being tested. I also know how to conduct each test and how to plot the results and compare them.
What I need is someone to please explain to me is WHAT CAN BE LEARNED from these characterisation tests? I have been learning about these devices and their operation, and what is being measured by each test. I am familiar with each of them but I just need someone to PLEASE spell out what information can be learned from performing these tests.
Is it simply that I will learn which application each device is best suited to? Is it how future devices could be designed?
Thanks in advance.